Diodes launches first SiC 1200V MOSFET in TO247-4 package

The industrial-grade Silicon Carbide (SiC) MOSFET announced by Diodes Incorporated enables higher efficiency and higher density.

Diodes Incorporated (Diodes) has announced the latest addition to its Silicon Carbide (SiC) product portfolio: the DMWS120H100SM4 N-channel SiC MOSFET. For applications including industrial motor drives, solar inverters, data centers and telecom power supply, DC-DC converters, and EV battery chargers, this device meets the demand for improved efficiency and higher power density.

The DMWS120H100SM4 is particularly suited for applications running in tough environments since it operates at a high voltage (1200 V) and drain current (up to 37 A) while maintaining a low thermal conductivity (RθJC = 0.6°C/W). For a 15 V gate drive, this MOSFET’s low RDS(ON) (typical) value of only 80mΩ reduces conduction losses and boosts efficiency. The device also includes a 52nC gate charge to cut switching losses and lower package temperature.

This device is the first TO247-4-packaged SiC MOSFET on the market. The additional Kelvin sensing pin can be linked to the device’s source to improve the MOSFET’s switching performance and allow for even higher power densities.

This SiC MOSFET is perfect for high-efficiency power management applications since it is made to reduce on-state resistance while maintaining superior switching performance.

Diodes Incorporated (Diodes) has announced the latest addition to its Silicon Carbide (SiC) product portfolio: the DMWS120H100SM4 N-channel SiC MOSFET. For applications including industrial motor drives, solar inverters, data centers and telecom power supply, DC-DC converters, and EV battery chargers, this device meets the demand for improved efficiency and higher power density.

The DMWS120H100SM4 is particularly suited for applications running in tough environments since it operates at a high voltage (1200 V) and drain current (up to 37 A) while maintaining a low thermal conductivity (RθJC = 0.6°C/W). For a 15 V gate drive, this MOSFET’s low RDS(ON) (typical) value of only 80mΩ reduces conduction losses and boosts efficiency. The device also includes a 52nC gate charge to cut switching losses and lower package temperature.

This device is the first TO247-4-packaged SiC MOSFET on the market. The additional Kelvin sensing pin can be linked to the device’s source to improve the MOSFET’s switching performance and allow for even higher power densities.

This SiC MOSFET is perfect for high-efficiency power management applications since it is made to reduce on-state resistance while maintaining superior switching performance.